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| Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1065 IRGP450UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * Switching-loss rating includes all "tail" losses TM * HEXFRED soft ultrafast diodes * Optimized for high operating frequency (over 5kHz) G C UltraFast CoPack IGBT VCES = 500V VCE(sat) 3.2V @VGE = 15V, IC = 33A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25C IC @ T C = 100C ICM ILM IF @ T C = 100C IFM VGE PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 500 59 33 120 120 29 120 20 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) Units V A V W C Thermal Resistance Parameter RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. -- -- -- -- -- Typ. -- -- 0.24 -- 6 (0.21) Max. 0.64 0.83 -- 40 -- Units C/W g (oz) Revision 1 C-649 To Order Previous Datasheet Index Next Data Sheet IRGP450UD2 Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)CES V(BR)CES/TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES VFM IGES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 500 -- -- V VGE = 0V, I C = 250A -- 0.41 -- V/C VGE = 0V, IC = 1.0mA -- 2.1 3.2 IC = 33A V GE = 15V -- 2.6 -- V IC = 59A -- 2.1 -- IC = 33A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -10 -- mV/C VCE = VGE, IC = 250A 7.0 22 -- S VCE = 100V, I C = 33A -- -- 250 A VGE = 0V, V CE = 500V -- -- 6500 VGE = 0V, V CE = 500V, T J = 150C -- 1.3 1.7 V IC = 25A -- 1.2 1.5 IC = 25A, T J = 150C -- -- 100 nA VGE = 20V Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During t b Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 120 22 41 33 26 110 91 0.91 0.25 1.2 37 29 160 110 1.8 13 2700 280 34 50 105 4.5 8.0 112 420 250 160 Max. Units Conditions 180 IC = 33A 33 nC VCC = 400V 62 -- TJ = 25C -- ns IC = 33A, V CC = 400V 170 VGE = 15V, R G = 5.0 140 Energy losses include "tail" and -- diode reverse recovery. -- mJ 1.7 -- TJ = 150C, -- ns IC = 33A, V CC = 400V -- VGE = 15V, R G = 5.0 -- Energy losses include "tail" and -- mJ diode reverse recovery. -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V -- = 1.0MHz 75 ns TJ = 25C 160 TJ = 125C I F = 25A 10 A TJ = 25C 15 TJ = 125C V R = 200V 375 nC TJ = 25C 1200 TJ = 125C di/dt = 200A/s -- A/s TJ = 25C -- TJ = 125C Pulse width 5.0s, single shot. VCC=80%(V CES), VGE=20V, L=10H, R G= 5.0, ( See fig. 19 ) Pulse width 80s; duty factor 0.1%. Refer to Section D - page D-13 for Package Outline 3 - JEDEC Outline TO-247AC C-650 To Order |
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